Updated February 15, 2007

Aluminum nitride is a safe alternative to BeO substrates.

Formula or Composition:	AlN
Dielectric Constant ():	8.9
Dissipation Factor(a.k.a. loss tangent, or tan ):	0.0005
Temperature Coefficient of :	ppm/°C
Bulk Resistivity:	-cm
Temperature Coefficient of Resistivity (TCR):	ppm/°C
Mass Density:	3.26 gr/cc
Specific Heat:	0.82 J/g/°C
Thermal Conductivity (k):	170 W/m°C
Temperature Coefficient of Expansion (TCE):	4.5 ppm/°C
Melting Point, °C:	2200
Melting Point, °F:	3992