Updated October 22, 2006

Gallium nitride is typically only used in epitaxial layers on a silicon carbide substrate.

Formula or Composition:	GaN
Relative Dielectric Constant ():
Dissipation Factor (a.k.a. loss tangent, or tan):
Temperature Coefficient of :	ppm/°C
Bulk Resistivity:	-cm
Temperature Coefficient of Resistivity (TCR):	ppm/°C
Mass Density:	6.1 gr/cc
Specific Heat:	J/g/°C
Thermal Conductivity (k):	W/m°C
Temperature Coefficient of Expansion (TCE):	ppm/°C
Melting Point	800 °C 1472 °F