Load pull for
power devices
Updated April 5,
2009
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noise parameters using source pull
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Definitions
of load pull versus source pull
Why load-pull
a power device?
Load-pull bench
block diagram
Calibration
and verification procedures
Example
1: measuring a power transistor
Definitions
of load pull versus source pull
Microwaves101 convention:
When we're talking about the process of load pull or source pull
as nouns (or adjectives like "load pull bench") we won't
hyphenate. When we're telling you to load-pull or source-pull something
(verbs), we'll hyphenate. Just so you know.
Load pull: the process
of varying the impedance seen by the output of an active
device to other than 50 ohms in order to measure performance parameters,
in the simplest case, gain. In the case of a power device, a load
pull power bench is used to evaluate large signal parameters such
as compression characteristics, saturated power, efficiency and
linearity as the output load is varied across the Smith chart.
Harmonic
load pull: the process of varying the impedance at the output
of a device, with separate control of the impedances at F0, 2F0,
3F0, etc. A very tricky measurement!
Source pull: the process
of varying the impedance seen by the input of an active device
to other than 50 ohms in order to measure performance parameters.
In the case of a low noise device, source pull is used in a noise
parameter extraction setup to evaluate how signal-to-noise ratio
(noise figure) varies with source impedance.
In practice, power benches employ
both load and source pull, and noise parameter setups employ both
as well, but the emphasis is on one or the other. In power measurements,
the input is source-pulled to a single location that provides good
power gain, while the output is swept all over the Smith chart.
In noise parameter extraction, the output is load-pulled to an impedance
that provides good gain, then the input is swept all over the Smith
chart.
Microwave
impedance tuners are the "engines" that let you drive
all over the Smith Chart.
Why load pull
a power device?
The performance of an active
device is a function of many things:
- Frequency
- Bias point
- Temperature
- Source/load impedance at fundamental
frequency
- Load impedance at harmonic
frequencies
- Power level
When you measure active devices
on a network analyzer,
you are looking at the small-signal response in a fifty-ohm
system, as a function of frequency and bias point, and perhaps temperature
if you are fortunate enough to have a temperature controller. Using
linear CAD software you can accurately
predict the small-signal response if the device sees impedances
other than fifty ohms. It's more difficult to predict performance
under large-signal conditions. Perhaps you can obtain a large
signal model of your power device, or use Steve Cripps method for
predicting saturated power performance. But there are limitations
to each of these methods; large-signal models are notoriously inaccurate.
This is where load pull comes in--it can be employed to empirically
gather all of data you need to design a power amplifier and predict
its large-signal responses, including compression characteristics,
efficiency, harmonics and intermodulation products.
To review large-signal data,
most of the plots that are of interest will be on Smith
charts. Typically you examine data one frequency at a time,
by plotting contours of constant output power, gain, efficiency,
etc. The contours look like potatoes, a minor irritation if you
are on a low-carb diet. Of course, you can also plot Pin versus
Pout on Cartesian coordinates, and now you can do it at the "sweet
spot" where power is maximized.
Load pull bench
block diagram
Below is a simplified system
block diagram that shows most of the necessary components of a load
pull system that can measure both CW and two-tone (intermodulation)
signals on a transistor. The DUT resides in the middle, surrounded
by microwave tuners, then bias tees (this assumes that the tuners
provide a DC path from one port to the other, which is not always
the case). One component that is absent from the block diagram is
an RF probe station (probes plus coax cables) which is used to make
contact to the device. Note that the loss of all components between
the DUT and the tuners will affect the maximum reflection coefficient
to which you can load-pull, so you want to carefully choose low-loss
components in this case.

A pair of tuners are used. The
input-side tuner allows the source match to be "pulled"
to an impedance where the device has appreciable gain, then it is
generally left at this fixed impedance for all measurements on a
device at a fixed frequency. The output-side tuner is the one that
gets a work-out!
The test-set extender interfaces
the DUT to a suite of measurement equipment that makes up the rest
of the test gear. A signal generator (or perhaps two for two-tone
measurements), and quite often a power amplifier, a coupling network
and power meter, comprise the input network. The output interface
of the test set extender may include a high-power attenuator depending
on the available power of the transistor, then perhaps a power meter
and/or spectrum analyzer. A network analyzer is also used to measure
input/output response. All of the test gear inside of the test set
is hooked up with electrically-controlled RF switches which are
extremely repeatable. For convenience, system-controlled power supplies
and DC current meters are part of the setup; without these you would
have to calculate efficiency by hand, and who wants to do that for
1000 measurements that you can make in one hour?
Of course, the entire bench is
controlled by easy-to-use software running on a dedicated computer.
Once the setup is calibrated and the device installed, the operator
interface is entirely by computer. Grab a donut and let's go!
Calibration
and verification procedures
Calibrating the load pull station
is far more complicated than a normal S-parameter measurement, and
can take several hours. A vector network analyzer must be dedicated
to the setup, because the S-parameters of all of the components
must be be recorded, over the frequency band of interest. This is
not that big a deal for the cables, bias tees, probes and the stuff
behind the test-set extender, but for the tuners, hundreds of tuner
positions must be measured and stored. No question, the tuners are
the heart of the system, and the accuracy of the measurement is
most affected by the repeatability of the tuners.
Calibrating a load pull system
starts with some basic setup information: what frequency band (start/stop/step
size?) What area of the Smith chart? What input power levels?
Once a load pull system is configured
and calibrated, its performance should be verified. This can be
accomplished by measuring something that is linear. A "thru"
turns out to be a very good verification standard and by measuring
it we can verify that we can make accurate measurements of device
gain. Absolute power is verified by putting a power meter directly
onto the output of the input tuner to verify input power at the
DUT, and directly on the output of the DUT to verify output power.
This is not practical for a device that is on-wafer, but demonstrating
such verifications at the tuner's coax (or waveguide) interface
shows that the methodology is sound.
The plot below show gain circles
on power contours for "State 1" (a fifty-ohm system).
This is the result of measuring a thru-line at a fixed power level.
As expected, the maximum output power is obtained at fifty ohms
(the center of the Smith Chart). the concentric circles surrounding
fifty ohms show how power drops off with load impedance, here each
circle represents a 0.5 dB drop in power. Click
here to learn more about maximum power transfer!

The plot below shows all of the
data that was taken to crunch out these curves. Taking this amount
of data "by hand" is unimaginable!

Editor's warning: from here
down, consider this page under construction!
This plot shows something to
do with errors.

Show this linearly
with error

These will show that we can measure
gain versus tuner state with magnitude accuracy of +/- 0.06 with
a few peaks greater than this. This is a typical calibration and
can get slightly better is we increase network analyzer averaging,
and use the best calibration techniques and temperature controlled
lab.
Now make a measurement versus
input power to verify the errors with this measurement.

Here we see the effect of noise
as we go below measured output power of -30 dBm. The system can
measure output powers greater than 45 dBm and this show the limits
of the VNA dynamic range.

This plot shows and even lower output power and the signal to noise
ratio of the receiver the network analyzer.
These will show that we can measure
gain versus input power. So now we have confidence in the measurements
of gain but to verify the absolute power we are in trouble for we
are on wafer and do not have a on wafer power meter. What has been
done is repeated coaxial calibration and power verification to prove
the methodology utilized.
Once we have faith in the basics
power measuring capably we can verify the two tone dynamic range.

We will now show a measurement
of a thru using two tones, and discuss the system performance. The
COI stays constant due to the system automatically controlling the
power level presented to the SA mixer. The system corrects for any
attention. This gives an instantaneous dynamic range of greater
than 75 dB over a controlled power range of 60 dB. Here are the
attenuator and amplifier block diagram details. As the measured
output power increases the attenuation in front of the SA is increased
to keep the mixer linear and at the power where it has the largest
dynamic range. These measurements are on a thru and the power levels
are limited to the power amplifiers available. System performance
contuse as we see and we have and effective system TOI of greater
that 65 dBm of course due to the nature of added attenuation as
the power increases there is no real TOI.
We can measure 90 dBc with two
tone of 5 watts each with proper spectrum analyzer and power amplifiers.

Spectrum power control block diagram
Example
1: measuring a power transistor
Unlike a network analyzer measurements,
load pull allows you to make a lot of measurements at a single frequency,
then move on to another frequency. You can vary input power, source
match and load match. You might try different bias voltages while
you are at it. These four variables will keep you busy for a while,
before you change frequency.
Like fifty-ohm large-signal test
stations, you can make swept power measurements at a single frequency.
But now you can make swept power measurements at any frequency,
at any of the reflection coefficient you previously calibrated.
Let's start by choosing a device.
Here's a power transistor with RF probes down.

An evaluation of any active device
should start with IV curves. Here they are:

After you choose a bias point,
next it's time to measure device S-parameters versus frequency,
so see how stable it is. From the S-parameters you need to carefully
examine the stability of the device (maximum available or stable
gain, K-factor, stability circles). You
should do this for every bias condition you are considering (class
AB, class A, etc.). Hey, this bad boy is unpotentially unstable
(K<1) everywhere!

A typical measurement, a scattering
of reflection coefficients are made on the input, with the output
fixed at fifty ohms, and the input power somewhere near where you
believe the output will be in 2 dB compression once the source and
load match are correct. This will allow you to construct a contour
plot to find a good input-side tuner location:
Show circles for 0.5 90 show
conjugate match plot_two.all

Pin pout max gain problems of
stability for max gain set device as close to simultaneous conjugate
match as we can. Because it's a potentially unstable device this
can not be done so we can just try S11 conjugate and S22 conjugate.

Pin pout tuned for power
Pin pout tuned for efficiency
 
Now show optimums
Contour for power and efficiency
versus input power
Show the optimum moving with
input power for both
Contour with both power and efficiency
Do a two tone measurement at
both points.
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