The substrates are GaAs (PHEMT), InP (HEMT), SiC (GaN HEMT), InAs / GaAs for Antimonide HEMT. The attached paper has the layer structures of the antimonide device.
You are visitor number 1450 to this page.
All content copyright P-N Designs, Inc.
Home | Virtual Lobby | Microwave Encyclopedia | Microwave Calculators | Unknown Editor | Acronym Dictionary Message Boards | Cool Links | Microwave Mortuary | What's New? | Search Our Site | Download Area |Contact