Updated May 25, 2007

Silicon carbide substrates are becoming the most popular material for processing gallium nitride. Out of many possible SiC crystalline structures there are two most popular ard 4H and 6H, but their material properties aren't much different.

Some of this data came from HRL, but it is probably for a CREE 6H wafer. Some of this info came from Russia's Ioffe Institute.

Formula or Composition:	SiC
Dielectric Constant ():	10.8
Dissipation Factor (a.k.a. loss tangent, or tan):	0.003
Temperature Coefficient of :	ppm/°C
Bulk Resistivity:	1E5 Ohm-cm
Temperature Coefficient of Resistivity (TCR):	ppm/°C
Mass Density:	3.2 gr/cc
Specific Heat:	0.69 J/g/°C
Thermal Conductivity (k):	350 W/m°C
Temperature Coefficient of Expansion (TCE):	4.8 ppm/°C
Melting Point	2700 °C 4892 °F