Updated September 21, 2004

Tantalum is rarely used in elemental form. Tantalum nitride (TaN) is often used as a resistor material in thin-film networks for microwave hybrids (on alumina) as well as MMICs (on GaAs), due to its high resistivity and stability over time and temperature. Tantalum pentoxide (and other oxides) have been used as capacitor dielectrics in electrolytic capacitors.

Formula or Composition:	Ta
Bulk Resistivity:	15.52 -cm
Temperature Coefficient of Resistivity (TCR):	3800 ppm/°C
Mass Density:	16.6 gr/cc
Heat Capacity:	140 J/kg/°C
Thermal Conductivity (k):	57.5 W/m°C
Temperature Coefficient of Expansion (TCE):	6.5 ppm/°C
Melting Point, °C:	2996 °C
Melting Point, °F:	5425 °F