InP is used as the substrate for some very high performance semiconductors using indium gallium arsenide. InP technology supports both HEMTs and HBTs.
Some of this info came from Russia's Ioffe Institute.
| Formula or Composition |
InP |
Dielectric Constant ( ) |
12.4 |
| Dissipation Factor (a.k.a. loss tangent, or tan) |
|
| Temperature Coefficient of |
ppm/°C |
| Bulk Resistivity |
-cm |
| Temperature Coefficient of Resistivity (TCR) |
ppm/°C |
| Mass Density |
4.81 gr/cc |
| Specific Heat |
0.31 J/g/°C |
| Thermal Conductivity (k) |
68 W/m°C |
| Temperature Coefficient of Expansion (TCE) |
4.6 ppm/°C |
| Melting Point |
1060°C
1940°F |