Indium Phosphide


InP is used as the substrate for some very high performance semiconductors using indium gallium arsenide. InP technology supports both HEMTs and HBTs.

Some of this info came from Russia's Ioffe Institute.

Formula or Composition InP
Dielectric Constant (Indium Phosphide) 12.4
Dissipation Factor (a.k.a. loss tangent, or tanIndium Phosphide)  
Temperature Coefficient of Indium Phosphide ppm/°C
Bulk Resistivity Indium Phosphide-cm
Temperature Coefficient of Resistivity (TCR) ppm/°C
Mass Density 4.81 gr/cc
Specific Heat 0.31 J/g/°C
Thermal Conductivity (k) 68 W/m°C
Temperature Coefficient of Expansion (TCE) 4.6 ppm/°C
Melting Point 1060°C

Author : Unknown Editor