Tantalum is rarely used in elemental form. Tantalum nitride (TaN) is often used as a resistor material in thin-film networks for microwave hybrids (on alumina) as well as MMICs (on GaAs), due to its high resistivity and stability over time and temperature. Tantalum pentoxide (and other oxides) have been used as capacitor dielectrics in electrolytic capacitors.

All values except melting point are assumed to be at 25 degrees C, and may vary dramatically over temperature.

Formula or Composition: Ta
Bulk Resistivity: 15.52 μΩ-cm
Bulk Resistivity: 1.552E-7 Ω-cm
Bulk Conductivity: 6.44E6 S/m
Temperature Coefficient of Resistivity (TCR): 3800 ppm/°C
Mass Density: 16.6 gr/cc
Heat Capacity: 140 J/kg/°C
Thermal Conductivity (k): 57.5 W/m°C
Temperature Coefficient of Expansion (TCE): 6.5 ppm/°C
Melting Point, °C: 2996 °C
Melting Point, °F: 5425 °F

Author : Unknown Editor